Cree pointed out that the total basal dislocation density of the epitaxial drift layer of the low basal dislocation material is less than 1 cm-2, and the basal dislocation capacity causing the Vf shift is less than 0.1 cm-2. Cree said that the launch of this new low-base dislocation material further demonstrates Cree's long-term commitment and innovation in silicon carbide material technology.
Silicon carbide is a high-performance semiconductor material widely used in the production of lighting, power devices and communication devices, including light-emitting diodes (LEDs), power conversion devices, and RF power transistors for wireless communications.
John Palmour, CTO of Power Technology and Radio Frequency (RF), said: "The development of silicon carbide bipolar devices has long been subject to forward voltage attenuation caused by basal plane dislocations. Materials can be used in high-voltage bipolar devices such as insulated gate bipolar transistors (IGBTs) and turn-off thyristors (GTOs) and increase the stability of these devices. This latest achievement helps eliminate the commercialization of hysteretic high-power devices. Obstruction."
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