Since the invention of silicon transistors and semiconductor integrated circuits more than 50 years ago, 3-D transistors have been put into mass production for the first time. This is a major breakthrough announced by Intel Corporation in Santa Clara, Calif., today, May 4, 2011. This indicates that the power consumption of CPUs using 3D technology will be reduced by half in the future. The revolutionary 3-D transistor design called Tri-Gate (Intel had disclosed it for the first time in 2002), and at the end of this year put into mass production 22nm Intel chips under the code name Ivy Bridge.
In fact, when Intel CEO Barrett visited China in 2003 to answer questions from reporters that Moore's Law did not consider power consumption growth, he disclosed to reporters about the development of 3-dimensional door technology. In 2008, the reporter went to Intel headquarters. During the interview, he also questioned Barrett's progress and obtained "realization in 3-5 years." The 3-D tri-gate transistor released today is representative of the fundamentals of 2-D planar transistor structure after 8 years. change.
All semiconductor transistor integrated circuits currently used are 2D, ie, semiconductor crystals are only produced in the plane, while 3D transistors are grown in 3D, which not only increases the level of integration, but also reduces the leakage current by more than 50%. In theory, all semiconductor chips can reduce power consumption by half in the future.
Paul Otellini, Intel’s President and Chief Executive Officer, said: “Intel’s scientists and engineers have once again achieved the transistor revolution by adopting a 3-D structure. As we push Moore’s Law into new areas, 3-D The structure will help us create amazing and world-changing equipment."
Compared to previous 32-nanometer planar transistors, the 22-nanometer 3-D tri-gate transistor offers a 37% improvement in performance at low voltage and consumes less than half the charge to reach 32-nanometer chips. D-plane transistor performance.
background:
Transit Ten Milestones December 16, 1947: William Shockley, John Bardeen, and Walter Brattain successfully developed the first transistor in Bell Labs.
2. 1950: William Shockley developed a bipolar junction transistor that is now a standard transistor.
October 18, 1954: The first transistor radio, Regency TR1, is on the market. This radio contains only four transistors.
3. April 25, 1961: Robert Neuss obtained the first integrated circuit patent. The initial transistors were sufficient for radios and phones, but newer electronic devices required smaller transistors - integrated circuits.
4, 1965: The birth of Moore's Law - Gordon Moore in the "E-Magazine" published an article predicts: the future number of transistors on the chip will double about every year (10 years later, revised to double every two years) . Three years later, Moore and Neuss created Intel, the English name Intel is the abbreviation for "integrated electronics."
5. 1969: Intel has developed the first successful PMOS silicon gate transistor technology. These transistors continue to use traditional silicon dioxide (SiO2) gate dielectrics, but new polysilicon gate electrodes have been introduced.
6, 1971: Intel introduced the first microprocessor - 4004.4004 specifications are 1/8 inch × 1/16 inch, contains 2250 transistors, using Intel's 10 micron PMOS technology on 2-inch wafer production.
7, 1985: The Intel 386 microprocessor comes out, contains 275,000 transistors, it is more than 100 times of the quantity of the initial 4004 transistor. The 386 is a 32-bit chip with multitasking capabilities that can run multiple programs at the same time. Initially manufactured using 1.5 micron CMOS technology.
August 13, 2002: Intel has announced several technological breakthroughs in 90nm process technology, including high-performance, low-power transistors, strained silicon, high-speed copper connectors, and new low-k dielectric materials. This is the first time in the industry that strained silicon has been used in the production process.
September 2007: Intel announced the use of a breakthrough transistor material, a high-k metal gate. Intel will use these materials to build insulation "walls" in the company's next-generation processors - Intel Core 2 Duo, Intel Core 2 Quad processor and Intel Xeon series multi-core processor's hundreds of millions of 45-nanometer transistors. And switch "door", research and development codenamed Penryn.
10. May 3, 2011 - Intel announced that it will mass-produce a completely new transistor design. Tri-Gate transistors will achieve unprecedented high performance and energy efficiency in a variety of computing devices, from servers to desktops, from laptops to handheld devices.
background:
How small and strong is 22 nm? The transistor, first developed by Bell Labs in 1947, is so large that it can be directly assembled by hand. In sharp contrast, a needle can hold more than 100 million 22-nanometer tri-gate transistors. This article can contain more than 6 million 22nm tri-gate transistors on a single English period symbol.
The 22-nm tri-gate transistor has a very small gate, and the width of one human hair can accommodate more than 4,000 gates. If an ordinary house continues to shrink at the pace of transistor development, then it is so small that you can only see it through a microscope. To see the 22-nm transistor with the naked eye, you must enlarge a chip bigger than the house. Compared with the first 4004 microprocessor that Intel introduced in 1971, the running speed of 22 nanometer CPUs has increased more than 4,000 times, and the power consumption of each transistor has reduced 5000 times. The price of each transistor is reduced to 1/50000.
A 22-nm transistor can switch 100 billion times in one second. It takes almost 2000 years for a person to turn on and off so many lights.
Designing tri-gate transistors is one thing, and mass production is another matter. The Intel factory produces more than 5 billion transistors per second, which is 150,000,000,000,000,000 per year. This is equivalent to more than 20 million transistors for all men, women and children in the world.
After the editorial: What do everyone have to do with so many transistors?
In fact, when Intel CEO Barrett visited China in 2003 to answer questions from reporters that Moore's Law did not consider power consumption growth, he disclosed to reporters about the development of 3-dimensional door technology. In 2008, the reporter went to Intel headquarters. During the interview, he also questioned Barrett's progress and obtained "realization in 3-5 years." The 3-D tri-gate transistor released today is representative of the fundamentals of 2-D planar transistor structure after 8 years. change.
All semiconductor transistor integrated circuits currently used are 2D, ie, semiconductor crystals are only produced in the plane, while 3D transistors are grown in 3D, which not only increases the level of integration, but also reduces the leakage current by more than 50%. In theory, all semiconductor chips can reduce power consumption by half in the future.
Paul Otellini, Intel’s President and Chief Executive Officer, said: “Intel’s scientists and engineers have once again achieved the transistor revolution by adopting a 3-D structure. As we push Moore’s Law into new areas, 3-D The structure will help us create amazing and world-changing equipment."
Compared to previous 32-nanometer planar transistors, the 22-nanometer 3-D tri-gate transistor offers a 37% improvement in performance at low voltage and consumes less than half the charge to reach 32-nanometer chips. D-plane transistor performance.
background:
Transit Ten Milestones December 16, 1947: William Shockley, John Bardeen, and Walter Brattain successfully developed the first transistor in Bell Labs.
2. 1950: William Shockley developed a bipolar junction transistor that is now a standard transistor.
October 18, 1954: The first transistor radio, Regency TR1, is on the market. This radio contains only four transistors.
3. April 25, 1961: Robert Neuss obtained the first integrated circuit patent. The initial transistors were sufficient for radios and phones, but newer electronic devices required smaller transistors - integrated circuits.
4, 1965: The birth of Moore's Law - Gordon Moore in the "E-Magazine" published an article predicts: the future number of transistors on the chip will double about every year (10 years later, revised to double every two years) . Three years later, Moore and Neuss created Intel, the English name Intel is the abbreviation for "integrated electronics."
5. 1969: Intel has developed the first successful PMOS silicon gate transistor technology. These transistors continue to use traditional silicon dioxide (SiO2) gate dielectrics, but new polysilicon gate electrodes have been introduced.
6, 1971: Intel introduced the first microprocessor - 4004.4004 specifications are 1/8 inch × 1/16 inch, contains 2250 transistors, using Intel's 10 micron PMOS technology on 2-inch wafer production.
7, 1985: The Intel 386 microprocessor comes out, contains 275,000 transistors, it is more than 100 times of the quantity of the initial 4004 transistor. The 386 is a 32-bit chip with multitasking capabilities that can run multiple programs at the same time. Initially manufactured using 1.5 micron CMOS technology.
August 13, 2002: Intel has announced several technological breakthroughs in 90nm process technology, including high-performance, low-power transistors, strained silicon, high-speed copper connectors, and new low-k dielectric materials. This is the first time in the industry that strained silicon has been used in the production process.
September 2007: Intel announced the use of a breakthrough transistor material, a high-k metal gate. Intel will use these materials to build insulation "walls" in the company's next-generation processors - Intel Core 2 Duo, Intel Core 2 Quad processor and Intel Xeon series multi-core processor's hundreds of millions of 45-nanometer transistors. And switch "door", research and development codenamed Penryn.
10. May 3, 2011 - Intel announced that it will mass-produce a completely new transistor design. Tri-Gate transistors will achieve unprecedented high performance and energy efficiency in a variety of computing devices, from servers to desktops, from laptops to handheld devices.
background:
How small and strong is 22 nm? The transistor, first developed by Bell Labs in 1947, is so large that it can be directly assembled by hand. In sharp contrast, a needle can hold more than 100 million 22-nanometer tri-gate transistors. This article can contain more than 6 million 22nm tri-gate transistors on a single English period symbol.
The 22-nm tri-gate transistor has a very small gate, and the width of one human hair can accommodate more than 4,000 gates. If an ordinary house continues to shrink at the pace of transistor development, then it is so small that you can only see it through a microscope. To see the 22-nm transistor with the naked eye, you must enlarge a chip bigger than the house. Compared with the first 4004 microprocessor that Intel introduced in 1971, the running speed of 22 nanometer CPUs has increased more than 4,000 times, and the power consumption of each transistor has reduced 5000 times. The price of each transistor is reduced to 1/50000.
A 22-nm transistor can switch 100 billion times in one second. It takes almost 2000 years for a person to turn on and off so many lights.
Designing tri-gate transistors is one thing, and mass production is another matter. The Intel factory produces more than 5 billion transistors per second, which is 150,000,000,000,000,000 per year. This is equivalent to more than 20 million transistors for all men, women and children in the world.
After the editorial: What do everyone have to do with so many transistors?