NXP Introduces Industry's First Bipolar Transistor in LFPAK56 (Power SO-8) Package

3225 50M crystal

Crystal oscillator

NXP Semiconductors NV has introduced the first bipolar transistor with a 5mm x 6mm x 1mm ultra-thin LFCAK56 (SOT669) SMD power supply. The new combination consists of six 60V and 100V low-saturation transistors with a collector current of up to 3A (IC) and a peak collector current (ICM) of up to 8A. The new transistor consumes 3W (Ptot) and has a low VCEsat value - its thermal and electrical performance is as good as that of a bipolar transistor in a much larger power package (such as DPAK). .

The NXP LFPAK package features a solid copper clip and a collector heat sink design, which is the basis for achieving such high power density, as this design significantly reduces the package's resistance and thermal resistance. LFPAK also eliminates the need for wire bonds used in many competing DPAK products, enabling NXP to significantly increase mechanical robustness and reliability.

The new LFCAK56 bipolar transistor is AEC-Q101 certified for a wide range of automotive applications and supports ambient temperatures up to 175 °C. These new low VCEsat transistors are also used in applications such as backlighting, motor drive and general power management. This year, the new bipolar transistor portfolio will continue to introduce new products, including dual transistors in the LFPAK56 D package and 6A, 10A and 15A high current models in the LFPAK56 package.

"We believe that NXP's LFPAK package will become the standard for compact power packages in the field of bipolar transistors," said NXP's LFPAK, which is now the benchmark for the MOSFET industry. The automotive market is particularly needed, says Joachim Stange, product manager for semiconductors at NXP Semiconductors. The use of bipolar transistors in this package lays the foundation for the development of modules of small size, high power density and high efficiency."

Time to market

The new bipolar low VCEsat transistors in the LFPAK56 package will be available in volume production, including: PHPT60603NY/PHPT60603PY, PHPT61003NY/PHPT61003PY and PHPT61002NYC/PHPT61002PYC.

Dual transistors in the LFPAK56D package and high current models of 6A, 10A and 15A will be released in the second quarter of 2014.